In today's era of rapid technological iteration in 5G communication and high-power semiconductors, the increasing integration of devices has made high heat flux density a key bottleneck restricting performance breakthroughs. Aluminum nitride paste, with its superior thermal conductivity, demonstrates irreplaceable value in high thermal conductivity electronic packaging substrates and heat dissipation devices, and ultrasonic dispersion technology has become the core key to unlocking its performance potential.
Aluminum nitride, as an ideal thermally conductive and insulating material, boasts a theoretical thermal conductivity of up to 220 W/(m·K) and a coefficient of thermal expansion matching that of silicon, effectively reducing interfacial thermal stress and ensuring long-term device reliability. However, nanoscale aluminum nitride powder, due to its large specific surface area and high surface free energy, is highly prone to agglomeration, directly affecting the paste's performance. In insufficiently dispersed pastes, agglomerated particles significantly increase the thermal interface resistance, leading to a sharp drop in substrate thermal conductivity, making it difficult to meet the heat dissipation requirements of devices such as 5G chips.

The application of ultrasonic dispersion technology has completely changed this situation. High-frequency ultrasound at around 20kHz instantly ruptures cavitation bubbles in the slurry, generating powerful impact and shear forces that effectively break up the agglomeration of aluminum nitride particles. Combined with organic modifiers such as silane coupling agents, an organic long-chain coating layer forms on the particle surface, further preventing agglomeration and ensuring uniform particle suspension in the dispersion medium. This synergistic treatment significantly improves the dispersion stability of the aluminum nitride slurry, laying the foundation for subsequent substrate preparation.
With the continuous upgrading of heat dissipation requirements, the application boundaries of aluminum nitride slurry are constantly expanding. From flexible thermally conductive films to high-power IGBT modules, the uniform dispersion characteristics provided by ultrasonic dispersion technology allow the thermal conductivity advantages of aluminum nitride to be fully realized. In this revolution of thermal management concerning the performance of electronic devices, aluminum nitride slurry, leveraging ultrasonic dispersion technology, is providing a core material solution for efficient heat dissipation of high heat flux density devices, helping to achieve faster breakthroughs and development in next-generation electronic technologies.